VBsemi Electronics VS3698AE
N-Channel MOSFET
| Part No. | VS3698AE |
|---|---|
| Datasheet | VS3698AE Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Motor Control● Industrial
● Load Switch
● ORing D Top View 1 8 2 7 G 3 6 4 5 Pin 1 S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD TJ, Tstg Soldering Recommendations (Peak Temperature) Limit 30 ± 20 60a, e 40a, e 22b, c 15b, c 150 35 3.3b, c 20 20 52 33 3.7b, c 2.4b, c - 55 to 150 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) t 10 s Steady State Symbol RthJA RthJC Typical 24 1.9 Notes: a.
