VS3698AE Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 30V/76A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 3.0 mΩ 4.4 mΩ 76 A PDFN3333 Part ID VS3698AE Package Type PDFN3333 Marking 3698AE Tape and reel information 5000pcs/Reel Absolute aximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Rating V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C 30 76 76 49 300 36.5 ±20 -55 to 150 Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance...