VPT 1N5817-1
The 1N5817 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard DO-41 hermetically sealed axial leaded glass package as well as the surface mount DO-213AB. This rugged device is capable of reliable operation in all space, military, commercial and industrial applications.| Part No. | 1N5817-1 |
|---|---|
| Datasheet | 1N5817-1 Download |
| Manufacturer |  VPT |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Low Forward Voltage: 450 mV @ IF = 1.0 A● Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586
● Reverse Breakdown Voltage: 20 V
● Hermetically Sealed Glass, DO-41 (DO-204AL) and MELF (DO-213AB)
DESCRIPTION
The 1N5817 is designed to be used in wide variety of applications, such as low voltage, high frequency inverters and reverse polarity protection. Rev. V1ELECTRICAL SPECIFICATIONS
: TA = +25°C (unless otherwise specified) Symbol Reverse Leakage Current VRM = 20 V (pk) IR1 µA — 70 Reverse Leakage Current TA = +100oC VRM = 20 V (pk) VRM = 12 V (pk) VRM = 6 V (pk) IR2 IR3 mA — 5.0 3.0 IR4 2.0 Reverse Leakage Current Forward Voltage Forward Voltage Forward Voltage Total Capacitance TA = -55oC VRM = 20 V (pk) IF = 0.1 A (pk) IF = 1.0 A (pk) IFM = 3.1 A (pk) TA = +100oC IF = 1.0 A (pk) TA = -55oC IF = 1.0 A (pk) VR = 5 V dc, .01 <f< 1 MHz, VSIG = 15 mV p-p IR µA — 100 VF1 .32 VF2 V dc — .45 VF3 .65 VF4 V dc — .40 VF5 V dc — .60 CT pF — 110 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
