1N5817-1
Description
The 1N5817 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.
Key Features
- Low Forward Voltage: 450 mV @ IF = 1.0 A
- Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586
- Reverse Breakdown Voltage: 20 V
- Hermetically Sealed Glass, DO-41 (DO-204AL) and MELF (DO-213AB)
