1N5817UR-1 Overview
The 1N5817 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard DO-41 hermetically sealed axial leaded glass package as well as the surface mount DO-213AB. This rugged device is capable of reliable operation in all...
1N5817UR-1 Key Features
- Low Forward Voltage: 450 mV @ IF = 1.0 A
- Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586
- Reverse Breakdown Voltage: 20 V
- Hermetically Sealed Glass, DO-41 (DO-204AL) and MELF (DO-213AB)