1N6492 Overview
The 1N6492 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard TO-39 hermetically sealed metal can package as well as the surface mount U4. This rugged device is capable of reliable operation in all space, military,...
1N6492 Key Features
- Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/567
- Extremely Low Forward Voltage and Reverse Leakage
- Reverse Breakdown Voltage: 45 V
- Hermetically Sealed TO-39 package (TO-205AF) and Surface Mount U4
- High Surge Capability
