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1N6492U4 - Silicon Schottky Barrier Diode

This page provides the datasheet information for the 1N6492U4, a member of the 1N6492 Silicon Schottky Barrier Diode family.

Description

The 1N6492 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.

Features

  • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/567.
  • Extremely Low Forward Voltage and Reverse Leakage.
  • Reverse Breakdown Voltage: 45 V.
  • Hermetically Sealed TO-39 package (TO-205AF) and Surface Mount U4.
  • High Surge Capability.

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Datasheet preview – 1N6492U4

Datasheet Details

Part number 1N6492U4
Manufacturer VPT
File Size 454.50 KB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet 1N6492U4 Datasheet
Additional preview pages of the 1N6492U4 datasheet.

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Full PDF Text Transcription

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1N6492, 1N6492U4 Silicon Schottky Barrier Diode Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/567 • Extremely Low Forward Voltage and Reverse Leakage • Reverse Breakdown Voltage: 45 V • Hermetically Sealed TO-39 package (TO-205AF) and Surface Mount U4 • High Surge Capability Description The 1N6492 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard TO-39 hermetically sealed metal can package as well as the surface mount U4. This rugged device is capable of reliable operation in all space, military, and industrial applications.
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