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2N2919L - NPN Dual Silicon Transistor

Download the 2N2919L datasheet PDF. This datasheet also covers the 2N2919 variant, as both devices belong to the same npn dual silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/355.
  • TO-78 and U package types.
  • Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Base Cutoff Current Test Conditions VCB = 70 V dc Symbol Units Min. ICBO1 µA dc.
  • Max. 10 Emitter - Base Cutoff Current Breakdown Voltage, Collector-Emitter VEB = 6 V dc IC = 10 mA dc IEBO1 µA dc.
  • 10 V(BR)C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N2919-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N2919L
Manufacturer VPT
File Size 511.21 KB
Description NPN Dual Silicon Transistor
Datasheet download datasheet 2N2919L Datasheet

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Other Datasheets by VPT

Part Number Description
2N2919 NPN Dual Silicon Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N2919, 2N2919L, 2N2919U 2N2920, 2N2920L, 2N2920U NPN Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/355 • TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Base Cutoff Current Test Conditions VCB = 70 V dc Symbol Units Min. ICBO1 µA dc — Max.