• Part: 2N5151U3
  • Description: PNP Power Silicon Transistor
  • Category: Transistor
  • Manufacturer: VPT Components
  • Size: 359.79 KB
Download 2N5151U3 Datasheet PDF
VPT Components
2N5151U3
2N5151U3 is PNP Power Silicon Transistor manufactured by VPT Components.
Features - Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/545 - Lightweight & Low Power - Ideal for Space, Military, and Other High Reliability Applications - Surface Mount U3 Package Rev. V5 Electrical Characteristics (TC = +25o C unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Voltage (Non-Saturated) Base - Emitter Saturation Voltage IC = -100 m A dc; IB = 0 VEB = -4.0 V dc; IC = 0 VEB = -5.5 V dc; IC = 0 VCE = -60 V dc; VBE = 0 VCE = -100 V dc; VBE = 0 VCE = -40 V dc; IB = 0 VCE = -5.0 Vdc; IC = -50 m A dc 2N5151U3 2N5153U3 VCE = -5.0 Vdc; IC = -2.5 A dc 2N5151U3 2N5153U3 VCE = -5.0 Vdc; IC = -5.0 A dc 2N5151U3 2N5153U3 IC = -2.5 A dc; IB = -250 m A dc IC = -5.0 A dc; IB = -500 m A dc VCE= -5.0 V dc; IC = -2.5 A dc IC = -2.5 A dc; IB = -250 m A dc IC = -5.0 A dc; IB = -500 m A dc V(BR)CEO V dc IEBO1 IEBO2 ICES1 ICES2 ICEO µA dc m A dc µA dc m A dc µA dc -80 - - - -...