2N5151 - PNP Power Silicon Transistor

VPT

Key Features

Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545.
TO-5 Package: 2N5151L, 2N5153L.
TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -100 mA dc, IB = 0 VEB = -4.0 V.

2N5151 pnp power silicon transistor by VPT - Datasheet Preview

Datasheet Details

Part number	2N5151
Manufacturer	VPT
File Size	428.96 KB
Description	PNP Power Silicon Transistor
Datasheet	2N5151 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N5151L	PNP Power Silicon Transistor
2N5151U3	PNP Power Silicon Transistor
2N5152	NPN Power Silicon Transistor
2N5152L	NPN Power Silicon Transistor
2N5152U3	NPN Power Silicon Transistor

Full PDF Text Transcription (Reference)

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2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -100 mA dc, IB = 0 VEB = -4.0 V dc, IC = 0 VEB = -5.5 V dc, IC = 0 VCE = -60 V dc, VBE = 0 VCE = -100 V dc, VBE = 0 VCE = -40 V dc, IB = 0 V(BR)CEO V dc IEBO1 IEBO2 ICES1 ICES2 µA dc mA dc µA dc mA dc ICEO µA dc -80 — — — — -1.0 -1.0 -1.0 -1.