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2N5157 - NPN High Power Silicon Transistors

Download the 2N5157 datasheet PDF. This datasheet also covers the 2N5157-MA variant, as both devices belong to the same npn high power silicon transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371.
  • TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Cutoff Current VCE = 400 Vdc, 2N3902 VCE = 500 Vdc, 2N5157 ICEO µAdc Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Dynamic Characteristics.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5157-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3902 & 2N5157 NPN High Power Silicon Transistors Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Cutoff Current VCE = 400 Vdc, 2N3902 VCE = 500 Vdc, 2N5157 ICEO µAdc Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Dynamic Characteristics Small-Signal Short-Circuit Forward Current Transfer Ratio VBE = 1.5 Vdc, VCE = 700 Vdc VBE = 5 Vdc, 2N3902 VBE = 6 Vdc, 2N5157 IC = 0.5 Adc, VCE = 5 Vdc IC = 1.0 Adc, VCE = 5 Vdc IC = 2.5 Adc, VCE = 5 Vdc IC = 3.5 Adc, VCE = 5 Vdc IC = 1.