2N5157 Overview
2N5157 Dimensions in mm (inches). 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. TO3 (TO204AA) PINOUTS 1 Base 2 Emitter Case - Collector Parameter VCEO IC(CONT) hFE ft PD Test Conditions Min.
| Part number | 2N5157 |
|---|---|
| Datasheet | 2N5157_SemeLAB.pdf |
| File Size | 43.44 KB |
| Manufacturer | Seme LAB |
| Description | Bipolar NPN Device |
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2N5157 Dimensions in mm (inches). 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. TO3 (TO204AA) PINOUTS 1 Base 2 Emitter Case - Collector Parameter VCEO IC(CONT) hFE ft PD Test Conditions Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N5157 | NPN HIGH POWER SILICON TRANSISTOR | Microsemi |
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2N5157 | HIGH VOLTAGE NPN SILICON TRANSISTORS | Motorola |
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2N5157 | Silicon NPN Power Transistors | SavantIC |
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2N5157 | NPN High Power Silicon Transistors | VPT |
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2N5157 | NPN High Power Silicon Transistors | MA-COM |
| Part Number | Description |
|---|---|
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| 2N5152 | NPN transistors |
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| 2N5154 | NPN transistors |
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| 2N5148 | Bipolar NPN Device |
| 2N5010 | SILICON EPITAXIAL NPN TRANSISTOR |
| 2N5012 | Bipolar NPN Device |
| 2N5013 | Bipolar NPN Device |