| Part number | 2N5157 |
|---|---|
| Datasheet | 2N5157-Microsemi.pdf |
| File Size | 54.92 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | NPN HIGH POWER SILICON TRANSISTOR |
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VCE = 700 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N3902 VEB = 6.0 Vdc ON CHARACTERISTICS(3) 2N5157 Base-Emitter Saturation Voltage IC = 1.0 Adc; IB = 0.1 Adc IC = 3.5 Adc; IB = 0.7 Adc Collector-Emitter Saturation Voltage IC = 1.0 Adc;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N5157 | HIGH VOLTAGE NPN SILICON TRANSISTORS | Motorola |
 |
2N5157 | Bipolar NPN Device | Seme LAB |
 |
2N5157 | Silicon NPN Power Transistors | SavantIC |
 |
2N5157 | NPN High Power Silicon Transistors | VPT |
 |
2N5157 | NPN High Power Silicon Transistors | MA-COM |
See all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N5152 | NPN POWER SILICON TRANSISTOR |
| 2N5152L | NPN POWER SILICON TRANSISTOR |
| 2N5154 | NPN POWER SILICON TRANSISTOR |
| 2N5154L | NPN POWER SILICON TRANSISTOR |
| 2N5114 | P-Channel J-FET |
| 2N5115 | P-Channel J-FET |
| 2N5116 | P-Channel J-FET |
| 2N5003 | PNP POWER SILICON TRANSISTOR |
| 2N5005 | PNP POWER SILICON TRANSISTOR |
| 2N5038 | NPN HIGH POWER SILICON TRANSISTOR |
