2N5157 is NPN HIGH POWER SILICON TRANSISTOR manufactured by Microsemi.
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
2N5157 | HIGH VOLTAGE NPN SILICON TRANSISTORS |
Seme LAB |
2N5157 | Bipolar NPN Device |
SavantIC |
2N5157 | Silicon NPN Power Transistors |
VPT Components |
2N5157 | NPN High Power Silicon Transistors |
MACOM Technology Solutions |
2N5157 | NPN High Power Silicon Transistors |
VCE = 700 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N3902 VEB = 6.0 Vdc ON CHARACTERISTICS(3) 2N5157 Base-Emitter Saturation Voltage IC = 1.0 Adc; IB = 0.1 Adc IC = 3.5 Adc; IB = 0.7 Adc Collector-Emitter Saturation Voltage IC = 1.0 Adc;.
