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2N5153L - PNP Power Silicon Transistor

Download the 2N5153L datasheet PDF. This datasheet also covers the 2N5151 variant, as both devices belong to the same pnp power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545.
  • TO-5 Package: 2N5151L, 2N5153L.
  • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -100 mA dc, IB = 0 VEB = -4.0 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5151-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5153L
Manufacturer VPT
File Size 428.96 KB
Description PNP Power Silicon Transistor
Datasheet download datasheet 2N5153L Datasheet

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Other Datasheets by VPT

Part Number Description
2N5153 PNP Power Silicon Transistor
2N5153U3 PNP Power Silicon Transistor
2N5151 PNP Power Silicon Transistor
2N5151L PNP Power Silicon Transistor
2N5151U3 PNP Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -100 mA dc, IB = 0 VEB = -4.0 V dc, IC = 0 VEB = -5.5 V dc, IC = 0 VCE = -60 V dc, VBE = 0 VCE = -100 V dc, VBE = 0 VCE = -40 V dc, IB = 0 V(BR)CEO V dc IEBO1 IEBO2 ICES1 ICES2 µA dc mA dc µA dc mA dc ICEO µA dc -80 — — — — -1.0 -1.0 -1.0 -1.