VPT 2N5671
NPN High Power Silicon Transistor
| Part No. | 2N5671 |
|---|---|
| Datasheet | 2N5671 Download |
| Manufacturer |  VPT |
| Description | NPN High Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/488● TO-3 (TO-204AA) Package
● Designed for Use in High Current Fast Switching
APPLICATIONS
Rev. V2ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 200 mA dc, 2N5671 IC = 200 mA dc, 2N5672 V(BR)CEO V dc 90 120 — Collector - Base Cutoff Current VCE = 120 V dc, 2N5671 VCE = 150 V dc, 2N5672 ICBO mA dc — 25 25 Emitter - Base Cutoff Current VEB = 7.0 V dc IEBO mA dc — 10 Collector - Emitter Cutoff Current VCE = 110 V dc, VBE = 1.5 V dc, 2N5671 VCE = 135 V dc, VBE = 1.5 V dc, 2N5672 ICEX1 µA dc — 250 250 Collector - Emitter Cutoff Current VCE = 80 V dc ICEO mA dc — 10 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Collector - Emitter Cutoff Current Forward-Current Transfer Ratio VCE = 2.0 Vdc; IC = 15 A dc VCE = 5.0 Vdc; IC = 20 A dc hFE - 20 20 IC = 15 A dc: IB = 1.2 A dc IC = 30 A dc: IB = 6.0 A dc VCE(sat)1 VCE(sat)2 V dc — IB = 1.2 A dc; IC = 15 A dc VBE(SAT) V dc — TA = +150oC VCE = 100 V dc, VBE = -1.
