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2N5671 & 2N5672
NPN High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/488
• TO-3 (TO-204AA) Package • Designed for Use in High Current Fast Switching
Applications
Rev. V2
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage
IC = 200 mA dc, 2N5671 IC = 200 mA dc, 2N5672
V(BR)CEO V dc
90 120
—
Collector - Base Cutoff Current
VCE = 120 V dc, 2N5671 VCE = 150 V dc, 2N5672
ICBO mA dc —
25 25
Emitter - Base Cutoff Current
VEB = 7.0 V dc
IEBO mA dc —
10
Collector - Emitter Cutoff Current
VCE = 110 V dc, VBE = 1.5 V dc, 2N5671 VCE = 135 V dc, VBE = 1.