Datasheet Summary
2N5671 & 2N5672
NPN High Power Silicon Transistor
Features
- Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/488
- TO-3 (TO-204AA) Package
- Designed for Use in High Current Fast Switching
Applications
Rev. V2
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector
- Emitter Breakdown Voltage
IC = 200 mA dc, 2N5671 IC = 200 mA dc, 2N5672
V(BR)CEO V dc
90 120
- Collector
- Base Cutoff Current
VCE = 120 V dc, 2N5671 VCE = 150 V dc, 2N5672
ICBO mA dc
- 25 25
Emitter
- Base Cutoff Current
VEB = 7.0 V dc
IEBO mA dc
- 10
Collector
- Emitter Cutoff...
