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2N5672 - NPN High Power Silicon Transistor

Download the 2N5672 datasheet PDF. This datasheet also covers the 2N5671 variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/488.
  • TO-3 (TO-204AA) Package.
  • Designed for Use in High Current Fast Switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5671-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5672
Manufacturer VPT
File Size 379.26 KB
Description NPN High Power Silicon Transistor
Datasheet download datasheet 2N5672 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5671 & 2N5672 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/488 • TO-3 (TO-204AA) Package • Designed for Use in High Current Fast Switching Applications Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 200 mA dc, 2N5671 IC = 200 mA dc, 2N5672 V(BR)CEO V dc 90 120 — Collector - Base Cutoff Current VCE = 120 V dc, 2N5671 VCE = 150 V dc, 2N5672 ICBO mA dc — 25 25 Emitter - Base Cutoff Current VEB = 7.0 V dc IEBO mA dc — 10 Collector - Emitter Cutoff Current VCE = 110 V dc, VBE = 1.5 V dc, 2N5671 VCE = 135 V dc, VBE = 1.