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2N5793A - NPN Dual Silicon Transistor

Download the 2N5793A datasheet PDF. This datasheet also covers the 2N5793 variant, as both devices belong to the same npn dual silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/495.
  • TO-78 and U package types.
  • Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Off Characteristics Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio IC = 10 mA dc VCB = 75 V dc VCB =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5793-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5793A
Manufacturer VPT
File Size 610.27 KB
Description NPN Dual Silicon Transistor
Datasheet download datasheet 2N5793A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5793, 2N5793A, 2N5794 2N5794A, 2N5794AU, 2N5794U NPN Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/495 • TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Off Characteristics Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio IC = 10 mA dc VCB = 75 V dc VCB = 50 V dc VEB = 6.0 V dc VEB = 4.0 V dc 2N5793, A VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 300 mA dc VCE = 1.