2N6287 - PNP Darlington Power Silicon Transistor

VPT

Download the 2N6287 datasheet PDF. This datasheet also covers the 2N6286 variant, as both devices belong to the same pnp darlington power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Available in JAN, JANTX and JANTXV per MIL-PRF-19500/505.
TO-3 (TO-204AA) Package.
Designed for General Purpose Amplifier and Low-Frequency Switching.

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2N6287 pnp darlington power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N6286-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N6287
Manufacturer	VPT
File Size	366.06 KB
Description	PNP Darlington Power Silicon Transistor
Datasheet	2N6287 Datasheet

📁 Similar Datasheet

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Other Datasheets by VPT

Part Number	Description
2N6283	NPN Darlington Power Silicon Transistor
2N6284	NPN Darlington Power Silicon Transistor
2N6286	PNP Darlington Power Silicon Transistor
2N6211	PNP High Power Transistor
2N6212	PNP High Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N6286 & 2N6287 PNP Darlington Power Silicon Transistor Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/505 • TO-3 (TO-204AA) Package • Designed for General Purpose Amplifier and Low-Frequency Switching Applications Electrical Characteristics Parameter Test Conditions Rev. V3 Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = -100 mA dc 2N6286 2N6287 V(BR)CEO V dc -80 -100 — Collector - Emitter Cutoff Current VCE = -40 V dc, 2N6286 VCE = -50 V dc, 2N6287 ICEO mA dc — -1.0 Collector - Emitter Cutoff Current VCE = -80 V dc, VBE = +1.5 V dc, 2N6286 VCE = -100 V dc, VBE = +1.5 V dc, 2N6287 ICEX1 µA dc — -10 Emitter - Base Cutoff Current VEB = -7 V dc IEBO mA dc — -2.