JANHCB1N5711 Datasheet | VPT Components

JANHCB1N5711, JANKCB1N5711 Schottky Barrier Diode Die Features - Qualified to MIL-PRF-19500/444 - patible With All Wire Bonding And Die Attach Techniques with The Exception Of Solder Reflow - Silicon Dioxide Passivated - Ideal For Space, Military, & Other High Reliability Applications - Available In mercial Version As CD5711 Rev. V1 Electrical Characteristics (TA = +25o C unless otherwise specified) Parameter Test Conditions Symbol Units Min. Reverse Breakdown Voltage Reverse Breakdown Voltage Forward Voltage IR = 10 µA dc TA = -55 0C IR = 10 µA dc IF = 1 m A dc V(BR)1 V dc V(BR)2 V dc VF1 V dc - Forward Voltage Forward Voltage Forward Voltage Reverse Current Reverse Current Capacitance IF = 15 m A dc TA = -55o C IF = 1 m A dc TA = -55o C IF = 15 m A dc VR = 50 V dc TA = +150o C VR = 50 V dc VR = 0, f = 1 MHz, Vsig = 50 m V (pk) VF2 V...