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VSM120N04-T1 - These N-Channel enhancement mode power field effect transistors

This page provides the datasheet information for the VSM120N04-T1, a member of the VSM120N04-SS These N-Channel enhancement mode power field effect transistors family.

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode.

Features

  • 40V,120A,RDS(on). max=3.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green device available TO-252 TO-251 D.

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Datasheet preview – VSM120N04-T1

Datasheet Details

Part number VSM120N04-T1
Manufacturer VSEEI
File Size 1.32 MB
Description These N-Channel enhancement mode power field effect transistors
Datasheet download datasheet VSM120N04-T1 Datasheet
Additional preview pages of the VSM120N04-T1 datasheet.

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Full PDF Text Transcription

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VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Product Summary VDSS RDS(on).max@ VGS=10V ID Pin Configuration 40V 3.5mΩ 120A Features  40V,120A,RDS(on).max=3.
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