VSM120N04-T1 Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
VSM120N04-T1 Key Features
- 40V,120A,RDS(on).max=3.5mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green device available