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VSM120N04-T1 - These N-Channel enhancement mode power field effect transistors

Download the VSM120N04-T1 datasheet PDF. This datasheet also covers the VSM120N04-SS variant, as both devices belong to the same these n-channel enhancement mode power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode.

Key Features

  • 40V,120A,RDS(on). max=3.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green device available TO-252 TO-251 D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VSM120N04-SS-VSEEI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VSM120N04-T1
Manufacturer VSEEI
File Size 1.32 MB
Description These N-Channel enhancement mode power field effect transistors
Datasheet download datasheet VSM120N04-T1 Datasheet

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VSM120N04-T2 These N-Channel enhancement mode power field effect transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Product Summary VDSS RDS(on).max@ VGS=10V ID Pin Configuration 40V 3.5mΩ 120A Features  40V,120A,RDS(on).max=3.