VSM120N04-T2
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and mutation mode.
Key Features
- 40V,120A,RDS(on).max=3.5mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green device available TO-252 TO-251 D
