VG26S17405FJ Overview
VG26(V)(S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application.
VG26S17405FJ Key Features
- Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply
- High speed tRAC acess time: 50/60ns
- Low power dissipation
- Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas)
- Extended
- out(EDO) page mode access
- I/O level: TTL patible (Vcc = 5V) LVTTL patible (Vcc = 3.3V)
- 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
- 4 refresh modesh
- RAS only refresh
