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VG26S17400FJ

Manufacturer: Vanguard International Semiconductor

VG26S17400FJ datasheet by Vanguard International Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

VG26S17400FJ datasheet preview

VG26S17400FJ Datasheet Details

Part number VG26S17400FJ
Datasheet VG26S17400FJ VG2617400FJ Datasheet (PDF)
File Size 514.57 KB
Manufacturer Vanguard International Semiconductor
Description CMOS DRAM
VG26S17400FJ page 2 VG26S17400FJ page 3

VG26S17400FJ Overview

or 3.3V only power supply. Low voltage operation is more suitable to be used on battery VG26(V)(S)17400FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only backup, portable electronic application.

VG26S17400FJ Key Features

  • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply
  • High speed tRAC access time : 50/60 ns
  • Low power dissipation
  • Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)
  • Fast Page Mode access
  • I/O level : TTL patible (Vcc = 5V) LVTTL patible (Vcc = 3.3V)
  • 2048 refresh cycles in 32 ms (Std) or 128ms (S
  • version)
  • 4 refresh mode
  • RAS only refresh
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