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VG36128801BT Datasheet

Manufacturer: Vanguard International Semiconductor
VG36128801BT datasheet preview

VG36128801BT Details

Part number VG36128801BT
Datasheet VG36128801BT_VanguardInternationalSemiconductor.pdf
File Size 1.33 MB
Manufacturer Vanguard International Semiconductor
Description CMOS Synchronous Dynamic RAM
VG36128801BT page 2 VG36128801BT page 3

VG36128801BT Overview

16 x 4 (word x bit x bank), respectively. All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are patible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII.

VG36128801BT Key Features

  • Single 3.3V ( ± 0.3V ) power supply
  • High speed clock cycle time -7H: 133MHz<2-2-2>, -7L: 133MHz<3-3-3>, -8H: 100MHz<2-2-2>
  • Fully synchronous operation referenced to clock rising edge
  • Possible to assert random column access in every cycle
  • Quad internal banks controlled by BA0 & BA1 (Bank Select)
  • Byte control by LDQM and UDQM for VG36128161DT
  • Programmable Wrap sequence (Sequential / Interleave)
  • Programmable burst length (1, 2, 4, 8 and full page)
  • Programmable /CAS latency (2 and 3)
  • Automatic precharge and controlled precharge

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