Datasheet4U Logo Datasheet4U.com

VG36646141BT-7 Datasheet CMOS Synchronous Dynamic Ram

Manufacturer: Vanguard International Semiconductor

Overview: VIS.

General Description

Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank.

it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply.

It is packaged in JEDEC standard pinout and standard plastic TSOP package.

Key Features

  • Single 3.3V ( ± 0.3V ) power supply.
  • High speed clock cycle time : 8/10ns.
  • Fully synchronous with all signals referenced to a positive clock edge.
  • Programmable CAS Iatency (2,3).
  • Programmable burst length (1,2,4,8,&Full page).
  • Programmable wrap sequence (Sequential/Interleave).
  • Automatic precharge and controlled precharge.
  • Auto refresh and self refresh modes.
  • Quad Internal banks controlled by A12 & A13 (Bank select.

More Datasheets from Vanguard International Semiconductor

Part Number Description
VG36646141BT-10 CMOS Synchronous Dynamic RAM
VG36646141BT-8 CMOS Synchronous Dynamic RAM
VG36641641BT CMOS Synchronous Dynamic RAM
VG36641641DT CMOS Synchronous Dynamic RAM
VG3664321412BT CMOS Synchronous Dynamic RAM
VG36643241BT-10 CMOS Synchronous Dynamic RAM
VG36643241BT-7 CMOS Synchronous Dynamic RAM
VG36643241BT-8 CMOS Synchronous Dynamic RAM
VG36644041DT CMOS Synchronous Dynamic RAM
VG36648041BT-10 CMOS Synchronous Dynamic RAM

VG36646141BT-7 Distributor