VG36646141BT-8 Description
Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package.
VG36646141BT-8 Key Features
- Single 3.3V ( ± 0.3V ) power supply
- High speed clock cycle time : 8/10ns
- Fully synchronous with all signals referenced to a positive clock edge
- Programmable CAS Iatency (2,3)
- Programmable burst length (1,2,4,8,&Full page)
- Programmable wrap sequence (Sequential/Interleave)
- Automatic precharge and controlled precharge
- Auto refresh and self refresh modes
- Quad Internal banks controlled by A12 & A13 (Bank select)
- Each Bank can operate simultaneously and independently