VS3506AD Datasheet | Vanguard Semiconductor

Features - P-Channel，-5V Logic Level Control - Low on-resistance RDS(on) @ VGS=-4.5 V - Fast Switching - Enhancement mode - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant -30V/-80A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 6.5 mΩ 10 mΩ -80 A TO-252 Part ID VS3506AD Package Type TO-252 Marking 3506AD Tape and reel information 2500PCS/Reel Maximum ratings, at T A =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-10V Avalanche energy, single pulsed ② PDSM Maximum power dissipation Maximum power dissipation ③ TSTG TJ Storage and Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance...