VS3506AS Description
VS3506AS-VB VS3506AS-VB Datasheet P-Channel 30 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration SO-8 Single D D5 D6 D7 8 -30 0.0050 0.0080 27 18 Single S.
VS3506AS Key Features
- TrenchFET® Gen IV p-channel power MOSFET
- Enables higher power density
- 100 % Rg and UIS tested
VS3506AS Applications
- Battery management in mobile devices