VS3506AS
VS3506AS is P-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Gen IV p-channel power MOSFET
- Enables higher power density
- 100 % Rg and UIS tested
APPLICATIONS
- Battery management in mobile devices
- Adapter and charger switch
- Battery switch
- Load switch
4 3G 2S 1S S Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
Single pulse avalanche current Single pulse avalanche energy
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) c
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT
-30 20
-18 -13 -11 -8 -145
-5 -2.8 b,...
