VS3506AP Datasheet | Vanguard Semiconductor

Features - P-Channel，-5V Logic Level Control - Low on-resistance RDS(on) @ VGS=-4.5 V - Fast Switching - Enhancement mode - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant -30V/-75A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 5.3 mΩ 8.4 mΩ -75 A PDFN5x6 Part ID VS3506AP Package Type PDFN5x6 Marking 3506AP Tape and reel information 3000pcs/reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① IDM Pulse drain current tested Avalanche energy, single pulsed ② PDSM Maximum power dissipation Maximum power dissipation ③ TSTG TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RθJC Thermal Resistance-Junction to Case RθJA Thermal...