VS3506AS Datasheet | Vanguard Semiconductor

Features - P-Channel，-5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=-4.5 V - 100% Avalanche test - Pb-free lead plating; Ro HS pliant -30V/-19A P-Channel Advanced Power MOSFET V DS -30 V R @DS(on),TYP VGS=-10 V 5.7 mΩ R @DS(on),TYP VGS=-4.5 V 8.6 mΩ I D -19 A SOP8 Part ID VS3506AS Package Type SOP8 Marking 3506AS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=-10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C TSTG , TJ Storage and junction temperature range Thermal Characteristics Symbol Parameter RθJL Thermal Resistance, Junction-to-Lead RθJA Thermal Resistance, Junction-to-Ambient Rating -30...