VS3506AT Datasheet | Vanguard Semiconductor

Features - P-Channel，-5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=-4.5 V - Fast Switching and High efficiency - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant -30V/-100A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 6.2 mΩ 10 mΩ -100 A TO-220AB Part ID VS3506AT Package Type TO-220AB Marking 3506AT Tape and reel information 50pcs/Tube Maximum ratings, at T A =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-10V Avalanche energy, single pulsed ② PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics RJC Thermal Resistance, Junction-to-Case RJA...