VS3628DB Datasheet | Vanguard Semiconductor

30V Dual Asymmetric N-Channel Advanced Power MOSFET Features - Dual Asymmetric N-Channel - High Current Capability - Low on-resistance RDS(on) @ VGS=4.5 V - Low Gate Charge - Pb-free lead plating; RoHS pliant V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 30 30 V 14 6 mΩ 23 9 mΩ 20 40 A DFN3x3 Part ID VS3628DB Package Type DFN3x3 Marking 3628DB Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Q1 Q2 V(BR)DSS Drain-Source breakdown voltage 30 30 VGS Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V ① IDM Pulse drain current tested ② IDSM...