VS6610GI Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; RoHS pliant 60V/60A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 7.5 mΩ 12.5 mΩ TO-251 Part ID VS6610GI Package Type TO-251 Marking 6610GI Tape and reel information 75pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① TC =25°C TC =25°C TC =100°C TC =25°C IDSM Continu...