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VS6610GI - N-Channel Advanced Power MOSFET

Key Features

  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® Ⅱ Technology.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VS6610GI 60V/60A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 7.5 mΩ 12.5 mΩ 60 A TO-251 Part ID VS6610GI Package Type TO-251 Marking 6610GI Tape and reel information 75pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drai.

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Datasheet Details

Part number VS6610GI
Manufacturer Vanguard Semiconductor
File Size 377.17 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS6610GI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS6610GI 60V/60A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 7.5 mΩ 12.