VS6610GI Description
Features Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; VS6610GI 60V/60A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=20A,VGS=0V Tj=25℃,Isd=20A, VGS=0V di/dt=100A/μs -- 0.9 1.2 V -- 26 -- ns -- 14 --.
VS6610GI Key Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® Ⅱ Technology
- 100% Avalanche test
- Pb-free lead plating; RoHS pliant
- JUL, 2019