VS6614GE Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; RoHS pliant 65V/40A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10V R @ DS(on),TYP VGS=4.5V ID 65 V 10.5 mΩ 17 mΩ 40 A PDFN3333 Part ID VS6614GE Package Type PDFN3333 Marking 6614GE Packing 5000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage IS ID IDM IDSM EAS Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V Avalanche energy, single...