VS80N08AN Datasheet | Vanguard Semiconductor

Features - N-Channel，10V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=10 V - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 80V/105A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 80 V 7.2 mΩ 105 A TO-262 Part ID VS80N08AN Package Type TO-262 Marking 80N08AN Tape and reel information 50PCS/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C RθJC Rθ JA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Rating 80 105 105 75 420 319 156 ±25 -55 to...