VS80N08AT Datasheet | Vanguard Semiconductor

Features - N-Channel，10V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=10 V - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 80V/83A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V ID 80 V 6.8 mΩ 83 A TO-220AB Part ID VS80N08AT Package Type TO-220AB Marking 80N08AT Tape and reel information 50PCS/Tube Maximum ratings, at T A=25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG , TJ Storage and junction temperature range Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient Drain-Source Avalanche Ratings Avalanche Energy, Single Pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C Rating 80 83...