VSC080N06MS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance - Fast Switching - High Effective - Pb-free lead plating; RoHS pliant 60V/3A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V ID 60 70 3 SOT23 V mΩ A Part ID Package Type SOT23 Marking 003C Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage and operating temperature...