VSC160N10MS - N-Channel Advanced Power MOSFET

Vanguard Semiconductor

General Description

VSC160N10MS designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

Low On-Resistance Fast Switching Green Product (RoHS Compliant).

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VSC160N10MS n-channel advanced power mosfet by Vanguard Semiconductor - Datasheet Preview

Datasheet Details

Part number	VSC160N10MS
Manufacturer	Vanguard Semiconductor
File Size	604.42 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	VSC160N10MS Datasheet

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Full PDF Text Transcription (Reference)

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VSC160N10MS 100V/2.6A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching Green Product (RoHS Compliant) Description VSC160N10MS designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.