Datasheet4U Logo Datasheet4U.com

VSD007N07MS - N-Channel Advanced Power MOSFET

Key Features

  • N-Channel，5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® Technology.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VSD007N07MS 70V/65A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 70 V 6.3 mΩ 7.5 mΩ 65 A TO-252 Part ID VSD007N07MS Package Type TO-252 Marking 007N07M Tape and reel information 2500PCS/Reel Maximum ratings, at T j=25°C, unless otherwise speci.

📥 Download Datasheet

Datasheet Details

Part number VSD007N07MS
Manufacturer Vanguard Semiconductor
File Size 348.09 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSD007N07MS Datasheet

Other Datasheets by Vanguard Semiconductor

Part Number Description
VSD007N04MS N-Channel Advanced Power MOSFET
VSD007N06MS N-Channel Advanced Power MOSFET
VSD007NE4MS N-Channel Advanced Power MOSFET
VSD007P06MS P-Channel Advanced Power MOSFET
VSD003N06HS N-Channel Advanced Power MOSFET
VSD004N03MS N-Channel Advanced Power MOSFET
VSD004P03MS P-Channel Advanced Power MOSFET
VSD005N03MS N-Channel Advanced Power MOSFET
VSD005N05LS N-Channel Advanced Power MOSFET
VSD006N08MS N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD007N07MS 70V/65A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 70 V 6.3 mΩ 7.5 mΩ 65 A TO-252 Part ID VSD007N07MS Package Type TO-252 Marking 007N07M Tape and reel information 2500PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C ID=15A IAS Avalanche current L=0.