VSD009N06MS-G Overview
Features Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; Symbol Parameter VSD009N06MS-G 60V/60A N-Channel Advanced Power MOSFET Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=20A,VGS=0V Tj=25℃,Isd=20A, VGS=0V di/dt=100A/μs -- 0.9 1.2 V -- 24 -- ns -- 11 --.
VSD009N06MS-G Key Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® Ⅱ Technology
- 100% Avalanche test
- Pb-free lead plating; RoHS pliant
- AUG, 2019