VSD009N06MS-G Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; RoHS pliant 60V/60A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 7.5 mΩ 12.5 mΩ TO-252 Part ID VSD009N06MS-G Package Type TO-252 Marking 009N06M Tape and reel information 2500pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current...