Datasheet4U Logo Datasheet4U.com

VSD025N10HS - N-Channel Advanced Power MOSFET

Features

  • N-Channel.
  • Enhancement mode.
  • Very low on-resistance.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSD025N10HS 100V/32A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 20 mΩ I D 32 A TO-252 Part ID VSD025N10HS Package Type TO-252 Marking 025N10H Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Di.

📥 Download Datasheet

Datasheet preview – VSD025N10HS

Datasheet Details

Part number VSD025N10HS
Manufacturer Vanguard Semiconductor
File Size 345.50 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSD025N10HS Datasheet
Additional preview pages of the VSD025N10HS datasheet.

📁 Similar Datasheet

Other Datasheets by Vanguard Semiconductor

Full PDF Text Transcription

Click to expand full text
Features  N-Channel  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD025N10HS 100V/32A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 20 mΩ I D 32 A TO-252 Part ID VSD025N10HS Package Type TO-252 Marking 025N10H Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C L=0.
Published: |