• Part: VSD025N10HS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 345.50 KB
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Datasheet Summary

Features - N-Channel - Enhancement mode - Very low on-resistance - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; RoHS pliant 100V/32A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 20 mΩ I D 32 A TO-252 Part ID VSD025N10HS Package Type TO-252 Marking 025N10H Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C L=0.1mH IAS Avalanche Current,...