VSD025N10MS - N-Channel 100V MOSFET

Features

Trench Power MOSFET.
100 % Rg and UIS Tested.

VBsemi

Datasheet Details

Part number	VSD025N10MS
Manufacturer	VBsemi
File Size	202.58 KB
Description	N-Channel 100V MOSFET
Datasheet	VSD025N10MS Datasheet
Additional preview pages of the VSD025N10MS datasheet.

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VSD025N10MS-VB VSD025N10MS-VB Datasheet N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 0.0185 at VGS = 10 V ID (A)a 45 Qg (Typ.) 38 nC TO-252 D FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Primary Side Switch • Isolated DC/DC Converter www.VBsemi.com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C TC = 25 °C TA = 25 °C L = 0.

Published: Apr 28, 2025 |