Pb-free lead plating; RoHS compliant
VSD025N10MS
100V/32A N-Channel Advanced Power MOSFET
V DS
100 V
R @DS(on),TYP VGS=10 V
20 mΩ
R @DS(on),TYP VGS=4.5V
22 mΩ
I D 32 A
TO-252
Part ID VSD025N10MS
Package Type TO-252
Marking 025N10M
Tape and reel information
2500pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parame.
Full PDF Text Transcription for VSD025N10MS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
VSD025N10MS. For precise diagrams, and layout, please refer to the original PDF.
Features N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD02...
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g 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD025N10MS 100V/32A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 20 mΩ R @DS(on),TYP VGS=4.5V 22 mΩ I D 32 A TO-252 Part ID VSD025N10MS Package Type TO-252 Marking 025N10M Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C L=0.
VSD025N10MS Datasheet
