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VSD025N10MS - N-Channel Advanced Power MOSFET

Features

  • N-Channel.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSD025N10MS 100V/32A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 20 mΩ R @DS(on),TYP VGS=4.5V 22 mΩ I D 32 A TO-252 Part ID VSD025N10MS Package Type TO-252 Marking 025N10M Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parame.

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Datasheet Details

Part number VSD025N10MS
Manufacturer Vanguard Semiconductor
File Size 346.86 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSD025N10MS Datasheet
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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD025N10MS 100V/32A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 20 mΩ R @DS(on),TYP VGS=4.5V 22 mΩ I D 32 A TO-252 Part ID VSD025N10MS Package Type TO-252 Marking 025N10M Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C L=0.
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