VSE018N03MS
VSE018N03MS is N-Channel Advanced Power MOSFET manufactured by Vanguard Semiconductor.
Features
- N-Channel,5V Logic Level Control
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- Fast Switching
- 100% Avalanche Tested
- Pb-free lead plating; RoHS pliant
30V/30A N-Channel Advanced Power MOSFET
V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID
30 V 16 mΩ 20 mΩ 30 A
PDFN3333
Part ID
Package Type
PDFN3333
Marking 018N03M
Tape and reel information
5000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
ID Continuous drain current@VGS=10V
IDM EAS PD VGS
Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation...