VSE025C03MC Datasheet | Vanguard Semiconductor

Features - N+P Channel - Enhancement mode - Low on-resistance RDS(on) @ VGS=±4.5 V - Fast Switching and High efficiency - Pb-free lead plating; RoHS pliant 30V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 30 -30 V 15 24 mΩ 23 40 mΩ 25 -24 A PDFN3333 Part ID VSE025C03MC Package Type PDFN3333 Marking 025C03M Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating NMOS PMOS V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=±10V IDM Pulse drain current tested ① IDSM...