VSI004N10MS-G Description
Features Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology Fast Switching and High efficiency 100% Avalanche Tested Pb-free lead plating; VSI004N10MS-G 100V/130A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=75A,VGS=0V Tj=25℃,Isd=50A, VGS=0V di/dt=100A/μs -- 0.9 1.2 V -- 61 -- ns -- 86 -- nC...
VSI004N10MS-G Key Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® Ⅱ Technology
- Fast Switching and High efficiency
- 100% Avalanche Tested
- Pb-free lead plating; RoHS pliant
- VSI004N10MS-G