VSI007N06MS Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 60V/85A N-Channel Advanced Power MOSFET V DS 60 V R @DS(on),TYP VGS=10 V 5.0 mΩ R @DS(on),TYP VGS=4.5V 6.0 mΩ I D 85 A TO-251 Part ID VSI007N06MS Package Type TO-251 Marking Tape and reel information 007N06M 75pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ID Continuous Drain current@VGS=10V IDM Pulse Drain Current Tested ① PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient Drain-Source Avalanche...