VSI008N10MS
VSI008N10MS is N-Channel Advanced Power MOSFET manufactured by Vanguard Semiconductor.
Features
- N-Channel,5V Logic Level Control
- Enhancement mode
- Very low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® ⅡTechnology
- 100% Avalanche test
- Pb-free lead plating; RoHS pliant
100V/94A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID
100 V
6 mΩ
7.8 mΩ
TO-251SL
Part ID VSI008N10MS
Package Type TO-251SL
Marking 008N10M
Tape and reel information 75pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Gate-Source voltage
Diode continuous forward current
Continuous drain current @VGS=10V
Pulse drain current tested...