• Part: VSI008N10MS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 654.25 KB
Download VSI008N10MS Datasheet PDF
Vanguard Semiconductor
VSI008N10MS
VSI008N10MS is N-Channel Advanced Power MOSFET manufactured by Vanguard Semiconductor.
Features - N-Channel,5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® ⅡTechnology - 100% Avalanche test - Pb-free lead plating; RoHS pliant 100V/94A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 6 mΩ 7.8 mΩ TO-251SL Part ID VSI008N10MS Package Type TO-251SL Marking 008N10M Tape and reel information 75pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested...