VSI018N03MS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; RoHS pliant 30V/30A N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 16 mΩ 22 mΩ 30 A TO-251-S Part ID VSI018N03MS Package Type TO-251-S Marking 018N03M Tape and reel information 80pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage ID Continuous drain current@VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TC =25°C TC...