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VSI018N03MS - N-Channel Advanced Power MOSFET

Features

  • N-Channel.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSI018N03MS 30V/30A N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 16 mΩ 22 mΩ 30 A TO-251-S Part ID VSI018N03MS Package Type TO-251-S Marking 018N03M Tape and reel information 80pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(B.

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Datasheet Details

Part number VSI018N03MS
Manufacturer Vanguard Semiconductor
File Size 267.03 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSI018N03MS Datasheet

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Full PDF Text Transcription

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Features  N-Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSI018N03MS 30V/30A N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 16 mΩ 22 mΩ 30 A TO-251-S Part ID VSI018N03MS Package Type TO-251-S Marking 018N03M Tape and reel information 80pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage ID Continuous drain current@VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TC =25°C TC =100°C TC =25°C L=0.
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