Datasheet4U Logo Datasheet4U.com

VSI018N08HS - N-Channel Advanced Power MOSFET

Features

  • N-Channel,10V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSI018N08HS 80V/53A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 80 V 14 mΩ 53 A TO-251-S Part ID VSI018N08HS Package Type TO-251-S Marking 018N08H Tape and reel information 80pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source br.

📥 Download Datasheet

Datasheet Details

Part number VSI018N08HS
Manufacturer Vanguard Semiconductor
File Size 293.83 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSI018N08HS Datasheet
Other Datasheets by Vanguard Semiconductor

Full PDF Text Transcription

Click to expand full text
Features  N-Channel,10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSI018N08HS 80V/53A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 80 V 14 mΩ 53 A TO-251-S Part ID VSI018N08HS Package Type TO-251-S Marking 018N08H Tape and reel information 80pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Cha
Published: |