VSI080N06MS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance @ VGS=4.5 V - Fast Switching - Pb-free lead plating; RoHS pliant 60V/15A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 60 V 68 mΩ 85 mΩ 15 A TO-251-S Part ID VSI080N06MS Package Type TO-251-S Marking 080N06 Tape and reel information 80pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IDM PD IS EAS TJ TSTG Continuous drain current@VGS=10V Pulse drain current tested ① Maximum power dissipation Diode Continuous Forward Current Avalanche energy, single pulsed ②...